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Hirofumi Sumi

Portrait

Affiliation

Project Researcher
Department of Creative Informatics,
Graduate School of Information Science and Technology, The University of Tokyo
7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Phone: +81.3.5841.6937 (laboratory)
Fax: +81.3.5841.6952
Email: Hirofumi_Sumi

Curriculum Vitae

Dec. 2015- The University of Tokyo
JAPAN
  • Dec. 2015-   Project Researcher
    Department of Creative Informatics Graduate School of Information Science and Technology
   
Nov. 2015- Japan Science and Technology Agency; JST
JAPAN
  • Nov. 2015-   Program Manager
    Department of Innovation Research
   
May 2013
  -Jul. 2015
Taiwan Semiconductor Manufacturing Co, LTD (TSMC)
TAIWAN
  • May 2013-Jul. 2015   Technical Director
    R & D Division
   
Feb. 2013
  -May 2013
The University of Tokyo
JAPAN
  • Feb. 2013-May 2013   Visiting Researcher
    VLSI Design and Education Center (VDEC)
   
Apr. 2006
  -Mar. 2009
WASEDA UNIVERSITY
JAPAN
  • Apr. 2006-Mar. 2009   Visiting Professor
    Research Institute for Science and Engineering, Graduate School of Information
   
April 1985
  -Jan. 2013
SONY CORPORATION
JAPAN
  • Apr. 2009-Jan.2013   Chief Patent Manager
    Image Sensor Business Division
  • Jan. 2006-Sep. 2008   Head of Senior Manager, Project Manager, Distinguished Researcher
    The Imaging System Development Dept. Imaging system Division
  • Jan. 2003-Dec. 2005   Senior Principal Engineer (Distinguished Engineer)
  • Jan. 2000-Dec. 2002
    Principal Engineer (Distinguished Engineer)
    Project Manager the First Commercialized CMOS Image Sensor
    Senior Manager
    Administer the Commercialized CMOS Image Sensor and Camera Module
  • Apr. 1998-Dec.1999   Principal Engineer (Distinguished Engineer)
    Head of Development Team of CMOS Image Sensor
  • Jul. 1996-Mar. 1997   Principal Engineer (Distinguished Engineer)
  • Apr. 1998-Jun. 1996   Head Engineer, Back-End Process
  • Apr. 1985-Mar. 1988   Engineer

COMMENDATIONS

1990: President Award in Semiconductor group in Sony: Development of SALICIDE technology
2001: President Award in Semiconductor group: Development of 3D depth CMOS image sensor with buried photo diode
2001: Sony six sigma president awards: analyzing of low Noise CMOS image sensor
2002: Sony six sigma president awards: Development of low noise CMOS image sensor

1998: Invention Award: 1st Prize Patent (JP) No2737946
2009: Invention Award: 1st Prize Patent (US) No.US09/499449

PUBLICATIONS

  • Hirofumi Sumi, Toshiharu Yanagida, Yukiyasu Sugano, Jay.N Sasserath: New contact process using soft etch for stable ohmic characteristics and its application to 0.1micron CMOS devices, IEDM Tech. Dig.,pp113-116, December 1994
  • Hirofumi Sumi, Toshiyuki Nishihara, Yukiyasu Sugano, Haruko Masuya, Masao Takasu: New silicidation technology by SITOX(silicidation through oxide) and its impact on the sub-half micron; MOS devices, IEDM Tech. Dig., pp249-252, December 1990
  • H Sumi, Characterization of Image sensor, IEEE International Solid State Circuits Conference Forum, 2005. Digest of Technical Papers. ISSCC 2005 Feb. 6-10, 2005
  • Masaki Sakakibara, Shoji Kawahito, Dwi Handoko, Nobuo Nakamura Hiroki Sato, Mizuho Higashi, Keiji Mabuchi and Hirofumi Sumi; A high-sensitivity CMOS image sensor with gain-adaptive column amplifiers, IEEE Journal of Solid State Circuits, vol 40, pp. 1147-1156, May 2005
  • Keiji Mabuchi, Nobuo Nakamura, Eiichi Funatsu, Takasih Abe, Tomoyuki Umeda, Tetsuro Hoshino, Ryoji Suzuki and Hirofumi Sumi; CMOS image sensors comprised of floating diffusion driving buried photodiode; IEEE Journal of Solid state Circuits, vol. 39, pp. 2408-2416, December 2004
  • Keiji Mabuchi, Nobuo Nakamura, Eiichi Funatsu, Takasih Abe, Tomoyuki Umeda, Tetsuro Hoshino, Ryoji Suzuki and Hirofumi Sumi; CMOS image sensor using floating diffusion driving buried photodiode, IEEE International solid state circuits conference, Vol. XL VII p112-113 February 2004
  • Shoji Kawahito, Masaki Sakakibara Dwi Handoko, Nobuo Nakamura Hiroki Sato, Mizuho Higashi, Keiji Mabuchi and Hirofumi Sumi; A column based pixel gain adaptive CMOS image sensor for low light level imaging, IEEE Inter national solid state circuits conference, vol VI, p224-225 February 2003
  • Kazuya Yonemoto, Hirofumi Sumi: A numerical analysis of a CMOS image sensor with a simple fixed-pattern noise reduction technology IEEE trans.Electron Devices, Vol49 pp746-753, May 2002
  • Toshinobu Sugiyama, Shinichi Yoshimura, Ryoji Suzuki and Hirofumi Sumi A 1/4 inch QVGA color imaging and 3-D sensing CMOS sensor with analog frame memory; IEEE, International solid state circuits conference, Vol XLV p434-435, February 2002
  • Kazuya Yonemoto, Hirofumi Sumi; A CMOS image sensor with a small fixed pattern noise reduction technology and a hole accumulated diode; IEEE Journal of solid state circuits conference, vol 35, pp 2038-2043, December 2000
  • Kazuya Yonemoto, Hirofumi Sumi, Ryoji Suzuki and Takahisa Ueno; A CMOS image sensor with simple FPN-reduction technology and a hole accumulated diode, IEEE, Inter national solid state circuits conference; vol XLIII, pp 102-103, February 2000
  • Sumito Arakawa, Yuji Yamaguchi, Satoshi Akui, Yasushi Fukuda, Hiroshi Hayashi, Masahiro Igarasi, Kei Ito, Hidetoshi Nagano, Masatoshi Imai, Hirofumi Sumi and Naosuke Asari; A 512GOPS fully programmable digitalImage processor with Full HD 1080p processing capabilities, ISSCC Dig. Tech papers pp312-313, Feb 2008
  • Hirofumi Sumi, Sumito Arakawa, Yuji Yamaguchi, Satoshi Akui, Yasushi Fukuda, Hiroshi Hayashi, Masahiro Igarasi, Kei Ito, Hidetoshi Nagano, Masatoshi Imai and Naosuke Asari, Fully Programmable Digital Image Processor with Full HD 1080p processing capabilities; Cool chips 11 Tech papers April 2008
  • Abbas EL Gamal and Hirofumi Sumi; Seeion 19 overview Imagers, IEEE International solid state circuits conference, Vol XLVIII, pp344-345, Feb. 2005
  • N Yamashita, F. Nielsen and H Sumi; A fast and robust precision mosaicing system for Giga pixel images; Proceeding of the first international symposium on Information and computer elements (ISICE2007) p190-195, September 12-14 2007
  • T. Arai , T. Yasue , K. Kitamura , H. Shimamoto , T. Kosugi , S. Jun , S. Aoyama , M-C. Hsu , Y. Yamashita3 , H. Sumi , S. Kawahito: “A 1.1µm 33Mpixel 240fps 3D-Stacked CMOS Image Sensor with 3-Stage Cyclic-Based Analog-to-Digital Converters” ISSCC Dig. Tech papers pp312-313, Feb 2016 (To be presented in Feb, 2016)

TECHNICAL ASSOCIATIONS

  • H. Sumi, Low-noise Imaging System with CMOS Sensor for High-Quality Imaging: International Electron Devices Meeting, 2006. Technical Digest, Dec. 2006
  • H. Sumi, Overview of CMOS Imaging Technology: Optoelectronics and Photonics Applications for Consumers Forum, April 3-4, 2007 -Doubletree San Jose
  • H. Sumi, High-quality Imaging System with CMOS Image Sensor: The First International Symposium on Information and Computer Elements ISICE 2007, Sep. 2007
  • H. Sumi, K. Hoshino and Y Yamashita. High-quality Imaging System with CMOS Image sensor and the Application of Digital Still Imaging: CLAIRVOYANCE, EOS Conference on Frontiers in Electronic Imaging, Munich, June 18-19, 2007
  • Deng Zhang, *Hiroaki Ammo, Jegoon Ryu, *Hirofumi Sumi and Toshi Hiro Nishimura Graduate school of Information, Production and systems, WASEDA University, *SONY Corporation Telegraph Signal Noise on a CMOS Image Sensor in Motion Pictures 2009 INTERNATIONAL IMAGE SESOR WORKSHOP June 26-28, 2009, Solstrand Hotel & Bad Bergen, Norway

PATENT

US PATENTS

  • US8149302 Method of processing noise in image data, nose reduction unit, and imaging Apparatus
  • US7825964
  • US80308724 Solid-state image sensor and method for manufacturing
  • US7517713
  • US7830436 Method of controlling semiconductor device, signal processing method, semiconductor device, and electronic apparatus
  • US7531781 Method with image-taking portions optimize to detect separated wavelength components
  • US7414663 Imaging element, imaging device, camera module and camera system
  • US7375757
  • US6423993 Solid-state image-sensing device and method for production
  • US6417023 Method for producing solid-state image-sensing device
  • US6022805 Method for fabrication semiconductor device with a multi-layered interconnection structure having a low contact resistance
  • US6022798 Method of forming an interconnect using thin folks of Ti and TiN
  • US5915204 Method of manufacturing a semiconductor device including a metal silicide layer
  • US5776830 Process for forming silicide plugs in semiconductor devices
  • US5686355 Method for forming films of refractory metal
  • US5597739 MOS transistor and method for making the same
  • US5308793 Method for forming interconnect
  • US5290731 Aluminum metallization method
  • US5194405 Method of manufacturing a semiconductor device having a silicide layer

JAPAN PATENTS

  • 2009-252271
  • 2009-252270
  • 2009-252269
  • 2008-130931
  • 2006-264293
  • 2005-50212
  • 2004-317088
  • 2004-314340
  • 2004-250049
  • 2003-407966
  • 11-255906
  • 11-249473
  • 11-222692
  • 11-200808
  • 11-291363
  • 8-194903
  • 7-138407
  • 7-81573
  • 7-69015
  • 6-263805
  • 6-227582
  • 6-169028
  • 6-54714
  • 5-252561
  • 5-70957
  • 4-229487
Dr. Sumi has submitted over 400 patent applications during his career at Sony.

OTHER ACTIVITIES

Dr. Sumi was involved in following committees:
   IEEE, ISSCC, 2004 - 2010.
   IEEE, USENEX Computer elements workshop, 2006 - 2014.
   IEEE Asian Solid-State Circuits Conference, 2009 - 2012.
Because of these experience, he has a big network in the world in both of image sensor system and its application field.
Ishikawa Senoo Laboratory, Department of Information Physics and Computing, Department of Creative Informatics,
Graduate School of Information Science and Technology, University of Tokyo
Ishikawa Senoo Laboratory WWW admin: www-admin@k2.t.u-tokyo.ac.jp
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